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NTD5413N
TYPICAL PERFORMANCE CURVES
2500
2000
V GS = 0 V
T J = 25 ° C
10
8
Q T
1500
C iss
6
Q 1
Q 2
1000
4
500
0
0
C rss
10
20
30
40
C oss
50
60
2
0
0
5
10
15
20
25
30
I D = 20 A
T J = 25 ° C
35
40
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source Voltage vs. Total
Charge
1000
V DD = 48 V
I D = 20 A
V GS = 10 V
40
V GS = 0 V
T J = 25 ° C
100
t d(off)
t r
30
10
t f
t d(on)
20
10
1
1
10
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1000
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
140
V SD , SOURCE ? TO ? DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
0 V ≤ V GS ≤ 10 V
Single Pulse
120
I D = 30 A
100
T C = 25 ° C
10 ms
1 ms
100 m s
10 m s
100
10
1
dc
R DS(on) Limit
Thermal Limit
80
60
40
20
0.1
0.1
Package Limit
1
10
100
0
25
50
75
100
125
150
175
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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